| PART |
Description |
Maker |
| 1-1318125-1 |
Dynamic Series Connectors; V-HDR ASSY 8P FOR SEQUENTIAL T ( AMP )
|
Tyco Electronics
|
| IDT70824S_L IDT70824S45PFI IDT70824L IDT70824L20G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory)
HIGH SPEED 64K (4K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| FM93CS46 FM93CS46E FM93CS46V FM93CS46LZ |
(MICROWIRE⑩ Bus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE ™Bus Interface)256-Bit Serial EEPROM
(MICROWIRE Bus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface))1024-Bit Serial EEPROM with Data Protect and Sequential Read
|
FAIRCHILD[Fairchild Semiconductor]
|
| NM93CS06 |
(MICROWIRE⑩ Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read
|
FAIRCHILD[Fairchild Semiconductor]
|
| MB8541P |
CMOS 256-Bit Sequential Programmable ROM
|
Fujitsu
|
| FM93C56LM8 FM93C56EM8 FM93CS56VN FM93C56EMT8 FM93C |
(MICROWIRE TM Bus Interface))2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface))2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE ™ Bus Interface))2048-Bit Serial EEPROM
(MICROWIRE⑩ Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
FAIRCHILD[Fairchild Semiconductor]
|
| HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
| THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
2097152 WORDS x 32 BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5117800BSJ-70 HYB5117800BSJ-60 HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IDT70825S_L |
HIGH SPEED 128K (8K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
|
IDT
|
| MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM)
2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
